C 1 2011-03-14 - 1 - 1 UD04N65 n-ch 650v fast switching mosfets symbol parameter rating units v ds drain-source voltage 650 v v gs gate-sou r ce voltage 30 v i d @t c =25 continuous drain current, v gs @ 10v 1 4 a i d @t c =100 continuous drain current, v gs @ 10v 1 2.6 a i dm pulsed drain current 2 8 a eas single pulse avalanche energy 3 26.2 mj i as avalanche current 7 a p d @t c =25 total power dissipation 4 62.5 w t stg storage temperature range -55 to 150 t j operating junction temperature range -55 to 150 symbol parameter typ. max. unit r ja thermal resistance junction-ambient (steady state) 1 --- 62 /w r jc thermal resistance junction-case 1 --- 2 /w id 650v 2.6 ? 4a the UD04N65 is the highest performance n-ch mosfets with extreme high cell density , which provide excellent rdson and gate charge for most of the synchronous buck converter applications . the UD04N65 meet the rohs and green product requirement , 100% eas guaranteed with full function reliability approved. z super low gate charge z excellent cdv/dt effect decline z 100% eas guaranteed z green device available general description features applications z high efficient switched mode power supplies z electronic lamp ballast z lcd tv/ monitor z adapter absolute maximum ratings thermal data to252 pin configuration product summery bv dss r ds(on) bv dss r ds(on)
C 2 2011-03-14 - 2 - 2 n-ch 650v fast switching mosfets symbol parameter conditions min. typ. max. unit bv dss drain-source breakdown voltage v gs =0v , i d =250ua 650 --- --- v bv dss / t j bv dss temperature coefficient reference to 25 , i d =1ma --- 0.69 --- v/ r ds(on) static drain-source on-resistance 2 v gs =10v , i d =2a --- 2.1 2.6 v gs(th) gate threshold voltage v gs =v ds , i d =250ua 2 --- 5 v v gs(th) v gs(th) temperature coefficient --- -8.2 --- mv/ i dss drain-source leakage current v ds =520v , v gs =0v , t j =25 --- --- 2 ua i gss gate-source leakage current v gs = 30v , v ds =0v --- --- 100 na gfs forward transconductance v ds =15v , i d =2a --- 3 --- s r g gate resistance v ds =0v , v gs =0v , f=1mhz --- 3.4 6.8 q g total gate charge (10v) v ds =520v , v gs =10v , i d =1a --- 18 --- nc q gs gate-source charge --- 4.9 --- q gd gate-drain charge --- 6.1 --- t d(on) turn-on delay time v dd =300v , v gs =10v , r g =10 , i d =1a --- 11.2 --- ns t r rise time --- 18.8 --- t d(off) turn-off delay time --- 29.2 --- t f fall time --- 29.2 --- c iss input capacitance v ds =25v , v gs =0v , f=1mhz --- 775 --- pf c oss output capacitance --- 56 --- c rss reverse transfer capacitance --- 3.8 --- symbol parameter conditions min. typ. max. unit eas single pulse avalanche energy 5 v dd =50v , l=1mh , i as =4a 8.6 --- --- mj symbol parameter conditions min. typ. max. unit i s continuous source current 1,6 v g =v d =0v , force current --- --- 4 a i sm pulsed source current 2,6 --- --- 8 a v sd diode forward voltage 2 v gs =0v , i s =1a , t j =25 --- --- 1 v t rr reverse recovery time if=1a , di/dt=100a/s , t j =25 --- 195 --- ns q rr reverse recovery charge --- 580 --- nc note : 1.the data tested by surface mounted on a 1 inch 2 fr-4 board with 2oz copper. 2.the data tested by pulsed , pulse width Q 300us , duty cycle Q 2% 3.the eas data shows max. rating . the test condition is v dd =50v,v gs =10v,l=1mh,i as =7a 4.the power dissipation is limited by 150 junction temperature 5.the min. value is 100% eas tested guarantee. 6.the data is theoretically the same as i d and i dm , in real applications , should be limited by total power dissipation. electrical characteristics (t j =25 , unless otherwise noted) guaranteed avalanche characteristics diode characteristics UD04N65
C 3 2011-03-14 - 3 - 3 n-ch 650v fast switching mosfets 1.5 2.5 3.5 4.5 5.5 46810 v gs (v) r dson ( ? ) i d =2a 0 0.5 1 1.5 2 2.5 3 0.00 0.25 0.50 0.75 1.00 v sd , source-to-drain voltage (v) i s source current(a) t j =150 t j =25 0.2 0.6 1 1.4 1.8 -50 0 50 100 150 t j ,junction temperature ( ) normalized v gs(th) (v) 0.4 1.0 1.6 2.2 2.8 -50 0 50 100 150 t j , junction temperature ( ) normalized on resistance typical characteristics fig.1 typical output characteristics fig.2 on-resistance vs. g-s voltage fig.3 forward characteristics of reverse fig.4 gate-charge characteristics fig.5 normalized v gs(th) vs. t j fig.6 normalized r dson vs. t j UD04N65
C 4 2011-03-14 - 4 - 4 n-ch 650v fast switching mosfets 1 10 100 1000 10000 1 5 9 13172125 v ds , drain to source voltage (v) capacitance (pf) f=1.0mhz ciss coss crss 0.01 0.10 1.00 10.00 0.1 1 10 100 1000 10000 v ds (v) i d (a) 10us 100us 10ms 100ms dc t c =25 single pulse 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r jc ) 0.01 0.05 0.1 0.2 duty=0.5 single p dm d = t on /t t jpeak = t c +p dm xr jc t on t 0.02 fig.8 safe operating area fig.9 normalized maximum transient thermal impedance fig.7 capacitance fig.10 switching time waveform fig.11 unclamped inductive switching waveform UD04N65
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